Method of generating cracks in polycrystalline silicon rod and crack generating apparatus

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United States of America Patent

PATENT NO 8490901
APP PUB NO 20110024533A1
SERIAL NO

12805308

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Abstract

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A method of generating cracks in a polycrystalline silicon rod, comprising: heating a polycrystalline silicon rod; and subsequently performing local portion cooling of the polycrystalline silicon rod to apply a refrigerant fluid onto a spot-like area of a surface of the polycrystalline silicon rod.

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Patent Owner(s)

  • MITSUBISHI MATERIALS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashida, Syuuhei Yokkaichi, JP 2 2

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