Method of forming light emitter layer
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United States of America Patent
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Jul 11, 2006
Grant Date -
Nov 25, 2004
app pub date -
May 20, 2003
filing date -
May 20, 2003
priority date (Note) -
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Abstract
A light emitting layer including a quantum structure and the forming method of forming the same is provided. The forming method includes several steps. At first, a compound dielectric layer forms, including a dielectric layer and an impure dielectric layer, which comprises major elements and impurities. The compound dielectric layer is treated to drive the impurities to form the quantum structure in the dielectric layer according to the difference in characteristic between the major elements and impurities. For example, oxidizing the major elements to drive the impurities of the impure dielectric layer to form the quantum structure inside the dielectric layer, because the oxidizing capability of the major elements is stronger than that of the impurities. The quantum structure and compound dielectric layer construct the light emitting layer.
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