Contact structure and associated process for production of semiconductor electronic devices and in particular nonvolatile EPROM and flash EPROM memories
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United States of America Patent
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Sep 26, 2000
Grant Date -
N/A
app pub date -
Dec 29, 1997
filing date -
Dec 27, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process creates contacts in semiconductor electronic devices and in particular on bit lines of non-volatile memories with cross-point structure. The cross-point structure includes memory cell matrices in which the bit lines are parallel unbroken diffusion strips extending along a column of the matrix with the contacts being provided through associated contact apertures defined through a dielectric layer deposited over a contact region defined on a semiconductor substrate at one end of the bit lines. The process calls for a step of implantation and following diffusion of contact areas provided in the substrate at opposite sides of each bit line to be contacted to widen the area designed to receive the contacts.
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