Interconnect including integrally formed capacitor
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United States of America Patent
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Feb 20, 2024
Grant Date -
Apr 20, 2023
app pub date -
Oct 18, 2021
filing date -
Oct 18, 2021
priority date (Note) -
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Abstract
A method of making a semiconductor component includes depositing a first metal material onto a structure having a first cavity and a second cavity such that the first metal material fills the first cavity and forms a first lining on exposed surfaces of the second cavity. The method further includes depositing a dielectric material onto the structure such that the dielectric material forms a second lining on exposed surfaces of the first lining. The method further includes depositing a second metal material onto the structure such that the second metal material fills remaining volume in the second cavity.
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