Gate dielectric and method

United States of America Patent

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Nov 11, 2008
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Jul 26, 2002
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Jul 26, 2002

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Abstract

CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.

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TEXAS INSTRUMENTS INCORPORATED

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Colombo, Luigi	Dallas, TX	167	4715
Mercer, Douglas E	Richardson, TX	11	179
Rotondaro, Antonio L P	Dallas, TX	53	1845

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Gate dielectric and method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

10205814

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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
November 11, 2008	US,7449385,B2 US7449385B2	GRANTED PATENT AS SECOND PUBLICATION
January 29, 2004	US,20040016973,A1 US20040016973A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	7449385
SERIAL NO	10205814
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10205814

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