Robust DEMOS transistors and method for making the same
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United States of America Patent
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Apr 7, 2009
Issued Date -
N/A
app pub date -
Jan 4, 2006
filing date -
May 3, 2004
priority date (Note) -
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Abstract
Extended-drain MOS transistor devices and fabrication methods are provided, in which a drift region of a first conductivity type is formed between a drain of the first conductivity type and a channel. The drift region comprises first and second portions, the first portion extending partially under a gate structure between the channel and the second portion, and the second portion extending laterally between the first portion and the drain, wherein the first portion of the drift region has a concentration of first type dopants higher than the second portion.
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