Fluorine doping concentrations in a multi-structure semiconductor device
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United States of America Patent
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Dec 5, 2000
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N/A
app pub date -
May 28, 1997
filing date -
Jun 3, 1996
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Abstract
A semiconductor device is manufactured by forming a first fluorine doped plasma silicon oxide film having a high fluorine concentration on first metallic interconnections formed on a semiconductor substrate surface, forming, a second fluorine doped plasma silicon oxide film having a low fluorine concentrations on the first film, and carrying out chemical machine polishing (CMP) only on the second fluorine doped plasma silicon oxide film.
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