High-density field emission elements and a method for forming said emission elements
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United States of America Patent
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Jul 19, 2011
Grant Date -
Nov 12, 2009
app pub date -
Jul 20, 2009
filing date -
Feb 14, 2005
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Abstract
A method for forming high density emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes. The emission elements formed according to the present invention provide a more uniform emission of electrons. Further, a display incorporating emission elements formed according to the present invention provides increased brightness. The reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image.
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