Semiconductor structure and method of forming

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United States of America Patent

PATENT NO 11133197
APP PUB NO 20190326132A1
SERIAL NO

16458938

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Abstract

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A structure and method of forming are provided. The structure includes a dielectric layer disposed on a substrate. The structure includes a cavity in the dielectric layer, and a plurality of contacts positioned in the cavity and bonded to the substrate. A component is bonded to the plurality of contacts. Underfill is disposed in the cavity between the dielectric layer and the component. A plurality of connectors is on the dielectric layer, the connectors being connected through the dielectric layer to a conductor that is at a same level of metallization as the plurality of contacts.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hsien-Wei Hsinchu, TW 912 8220
Chen, Wei-Yu New Taipei, TW 670 5030
Su, An-Jhih Taoyuan, TW 191 1884
Yang, Tien-Chung Hsinchu, TW 32 168

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