Organometallic precursors for seed/barrier processes and methods thereof
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United States of America Patent
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Dec 14, 2010
Grant Date -
Aug 14, 2008
app pub date -
Feb 14, 2007
filing date -
Feb 14, 2007
priority date (Note) -
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Abstract
Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.
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