Flow-rate sensor
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United States of America Patent
Stats
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Jun 7, 2022
Grant Date -
Sep 9, 2021
app pub date -
Jun 20, 2019
filing date -
Jul 12, 2018
priority date (Note) -
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Abstract
A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.
First Claim
Family
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- HITACHI ASTEMO, LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Nakatsuchi, Hiroki | Tokyo, JP | 7 | 8 |
Onose, Yasuo | Hitachinaka, JP | 27 | 225 |
Shimada, Ryotaro | Tokyo, JP | 10 | 17 |
Yogo, Takayuki | Hitachinaka, JP | 53 | 254 |
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