Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 10355013
APP PUB NO 20180323207A1
SERIAL NO

15850592

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Abstract

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Provided herein may be a semiconductor device. The semiconductor device may include a first substrate, a second substrate disposed on the first substrate, a stack which is disposed on the second substrate and includes stacked memory cells, and a discharge contact structure electrically coupling the second substrate with the first substrate such that charges in the second substrate are discharged to the first substrate.

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Patent Owner(s)

  • SK HYNIX INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Jung Dal Gyeonggi-do, KR 63 528
Shim, Sung Bo Gyeonggi-do, KR 10 43

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