Microelectronic devices including staircase structures, and related memory devices and electronic systems

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United States of America Patent

PATENT NO 11894305
APP PUB NO 20220238444A1
SERIAL NO

17658907

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Abstract

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A microelectronic device includes a stack structure, a staircase structure, conductive pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulating structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulating structures. The staircase structure has steps made up of edges of at least some of the tiers of the stack structure. The conductive pad structures are on the steps of the staircase structure and include beta phase tungsten. The conductive contact structures are on the conductive pad structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Billingsley, Daniel Meridian, US 30 34
Greenlee, Jordan D Boise, US 135 95
Hopkins, John D Meridian, US 235 644
Howder, Collin Boise, US 53 147
Klein, Rita J Boise, US 83 850
McTeer, Everett A Eagle, US 46 130
Xu, Lifang Boise, US 94 208

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