Method for controlling the forming voltage in resistive random access memory devices

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United States of America Patent

PATENT NO 11700778
APP PUB NO 20210234096A1
SERIAL NO

17226495

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Takashi Tuckahoe, US 717 5552
Cartier, Eduard A New York, US 89 1896
Consiglio, Steven Albany, US 5 7
Hopstaken, Marinus J P Carmel, US 8 10
Jamison, Paul C Hopewell Junction, US 60 1444
Narayanan, Vijay New York, US 308 5551
Tapily, Kandabara Albany, US 63 373
Tsunomura, Takaaki Albany, US 32 118
Wajda, Cory Albany, US 39 1279

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