Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser
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United States of America Patent
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Apr 6, 2004
Grant Date -
Oct 2, 2003
app pub date -
Apr 1, 2002
filing date -
Apr 1, 2002
priority date (Note) -
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Abstract
A heavily doped semiconductor layer is formed over the barrel of a vertical cavity surface emitting laser (VCSEL), providing current conduction and current spreading across and into the aperture of a laser barrel, while eliminating the need for a light-obstructing conductive electrical contact overhang. The VCSEL comprises a substrate, a first distributed Bragg reflector (DBR), an active region, a second DBR having a non-conductive ion implantation region and a laser barrel region with a first diameter, the heavily doped semiconductor layer, and a conductive electrical contact. The conductive electrical contact defines an opening with a second diameter that is greater than the first diameter.
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