Single crystal TFT from continuous transition metal delivery method
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United States of America Patent
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Sep 16, 2003
Grant Date -
Jul 11, 2002
app pub date -
Jan 8, 2002
filing date -
Jul 16, 1998
priority date (Note) -
Expired
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Abstract
A TFT fabricated from a single crystal grain, and fabrication method has been provided. A large crystal grain is made by precise control of annealment, transition metal concentration, the density of transition metal nucleation sites, and the distance between nucleation sites. In one aspect of the invention, a diffusion layer permits the continual delivery of transition metal at a rate that both supports the lateral growth of di-silicide, and large distances between nucleation sites.
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