SOI substrate and related methods

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11948880
SERIAL NO

17937918

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Abstract

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Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.

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Patent Owner(s)

  • SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Griswold, Mark Gilbert, US 88 1075
Seddon, Michael J Gilbert, US 174 1077

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