Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11942539
APP PUB NO 20220310837A1
SERIAL NO

17471739

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Abstract

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A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baba, Shotaro Kanazawa Ishikawa, JP 28 16
Fujino, Yuhki Kanazawa Ishikawa, JP 12 14
Katou, Hiroaki Nonoichi Ishikawa, JP 56 112
Tomita, Kouta Nonoichi Ishikawa, JP 14 41

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