Atomic layer deposition in the formation of gate structures for III-V semiconductor
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United States of America Patent
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Apr 6, 2010
Grant Date -
May 8, 2008
app pub date -
Nov 7, 2006
filing date -
Nov 7, 2006
priority date (Note) -
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Abstract
A semiconductor structure and method wherein a recess is disposed in a surface portion of a semiconductor structure and a dielectric film is disposed on and in contract with the semiconductor. The dielectric film has an aperture therein. Portions of the dielectric film are disposed adjacent to the aperture and overhang underlying portions of the recess. An electric contact has first portions thereof disposed on said adjacent portions of the dielectric film, second portions disposed on said underlying portions of the recess, with portions of the dielectric film being disposed between said first portion of the electric contact and the second portions of the electric contact, and third portions of the electric contact being disposed on and in contact with a bottom portion of the recess in the semiconductor structure. The electric contact is formed by atomic layer deposition of an electrically conductive material over the dielectric film and through the aperture in such dielectric film.
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