Semiconductor device and method of manufacturing the same
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United States of America Patent
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Dec 31, 2002
Grant Date -
N/A
app pub date -
Oct 26, 2000
filing date -
Jul 10, 2000
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A semiconductor device with a transistor having a first impurity region, a second impurity region, and a gate electrode formed on a semiconductor substrate. The semiconductor device also includes a first insulating film covering the transistor, and a capacitor formed on the first insulating film. The capacitor includes a dielectric film formed of either ferroelectric material or high dielectric material, and an upper electrode and a lower electrode positioned to put the dielectric film therebetween. A second insulating film is formed on the capacitor, and a wiring layer is formed on the second insulating film. A nitride film covers the wiring layer and a first silicon oxide film formed on the nitride film includes nitrogen at least at the surface thereof.
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