Multilayer gate electrode structure with tilted on implantation
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United States of America Patent
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May 4, 2004
Grant Date -
Jun 14, 2001
app pub date -
Dec 18, 1998
filing date -
Jul 10, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A transistor which has a stable characteristic and which can prevent tilted ions from penetrating through a grain boundary to a channel region when ions are implanted at an angle so as to form impurity layers while a gate electrode is used as a mask. A gate electrode comprises a two-layer structure of a lower film and an upper film formed on a gate insulation film on the surface of a semiconductor substrate. The thickness of the lower film is made greater than the range of ions in the thickness wise direction in the film when the ions are implanted to the sidewalls of the lower film.
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