Normal-incidence in-situ process monitor sensor

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11961721
APP PUB NO 20210193444A1
SERIAL NO

17197947

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Abstract

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An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Hanyou Palo Alto, US 34 534
Meng, Ching Ling Sunnyvale, US 17 112
Tian, Xinkang Fremont, US 33 199
Tuitje, Holger Fremont, US 16 88
Zhao, Qiang Milpitas, US 74 620

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