Semiconductor device and method of manufacturing the same

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United States of America

PATENT NO 11990340
SERIAL NO

17342508

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Abstract

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Embodiments provide a semiconductor device and a method of manufacturing the same. The method includes: providing a layer to be etched; forming a patterned first mask layer on the layer to be etched; and forming a patterned second mask layer formed on the layer to be etched, where the second mask layer and the first mask layer jointly define an opening, which exposes the layer to be etched; and etching the layer to be etched using the first mask layer and the second mask layer as masks, thus forming a pattern to be etched. The above-described method of manufacturing the semiconductor device allows the feature size of the first mask layer and the second mask layer to be relatively larger while keeping the device feature size the same, makes it possible to further reduce the feature size of the device.

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Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, ChihCheng Hefei, CN 37 1

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