CMOS over array of 3-D DRAM device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11980021
APP PUB NO 20220336470A1
SERIAL NO

17829939

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Abstract

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Disclosed are 3-D DRAM devices and methods of forming 3-D DRAM devices. One method may include forming a stack of DRAM device layers, forming a MOS substrate directly atop the stack of alternating DRAM device layers, and forming a trench through the MOS substrate and the stack of DRAM device layers. The method may further include depositing a protection layer over the MOS substrate, wherein the protection layer is deposited at a non-zero angle of inclination relative to a vertical extending from a top surface of the MOS substrate.

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Patent Owner(s)

  • APPLIED MATERIALS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fishburn, Fred Aptos, US 43 697
Varghese, Sony Manchester, US 58 363

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