Transparent double-injection field-effect transistor

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United States of America Patent

PATENT NO 7132319
SERIAL NO

11237444

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

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Patent Owner(s)

  • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoffman, Randy St Corvallis, OR 60 12628

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