Semiconductor device and method for manufacturing the same
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United States of America Patent
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Dec 21, 2010
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N/A
app pub date -
Jan 16, 2009
filing date -
Oct 29, 2008
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Abstract
A trench is formed by a process which removes a damage layer formed on a sidewall of a low dielectric constant layer, a process which forms a second protection insulating layer by a chemical vapor deposition (CVD) technique and forms a second concave portion by covering a sidewall of the low dielectric constant layer with the second protection insulating layer, and a process which shapes the second protection insulating layer by etch back so that a trench has a sidewall that the second protection insulating layer is selectively formed on a surface of the low dielectric constant layer.
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