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United States of America Patent
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Jun 6, 2023
Grant Date -
N/A
app pub date -
Mar 13, 2020
filing date -
Apr 17, 2019
priority date (Note) -
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Abstract
Even when a large current is intentionally flowed during a high-temperature conduction of a semiconductor element, there is a problem in that an overcurrent state is detected to stop current. In the present invention, an overcurrent detector 4 detects overcurrent when an input voltage Vin reaches a threshold voltage Vth, and outputs an overcurrent detection signal c to a gate driving unit 3. On the other hand, when a temperature detection signal a and a current control signal b are input, a transistor 52 is conducted, and the input voltage Vin of the overcurrent detector 4 becomes zero. In this case, the input voltage Vin of the overcurrent detector 4 does not reach the threshold voltage Vth. Therefore, the output of the drive signal output from the gate driving unit 3 is not stopped. For this reason, a large current can flow in a drain current Ids.
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