Solid-state imaging device of a vertical overflow drain system

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United States of America Patent

PATENT NO 5898195
SERIAL NO

08873108

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Abstract

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A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconductor substrate, and a first conductive type, second conductive type or intrinsic high-resistance semiconductor region formed on the second conductive semiconductor well region and having a lower concentration as compared with the second conductive semiconductor well region and a width enough for infrared ray to be sufficiently absorbed. A light receiving portion is formed on a surface of the first conductive type, second conductive type or intrinsic high-resistance semiconductor region.

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Patent Owner(s)

  • SONY SEMICONDUCTOR SOLUTIONS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harada, Kouichi Kanagawa, JP 76 1107

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