Semiconductor device and method of manufacturing the same

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Feb 9, 2010
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Jan 1, 2009
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Sep 4, 2008
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May 20, 2005

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Abstract

A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400.

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RENESAS ELECTRONICS CORPORATION

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Inventor Name	Address	# of filed Patents	Total Citations
Aga, Fumiaki	Tokyo, JP	6	122
Arakawa, Hideyuki	Tokyo, JP	13	322
Kuraya, Hidetoshi	Tokyo, JP	8	117

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Semiconductor device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

12204394

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PATENT NO	7659635
APP PUB NO	20090001572A1
SERIAL NO	12204394
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 09, 2010	US,7659635,B2 US7659635B2	GRANTED PATENT AS SECOND PUBLICATION
January 01, 2009	US,20090001572,A1 US20090001572A1	FIRST PUBLISHED PATENT APPLICATION

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12204394

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