Generation and use of integrated circuit profile-based simulation information
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United States of America Patent
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Aug 25, 2009
Grant Date -
May 24, 2007
app pub date -
Nov 9, 2006
filing date -
Feb 28, 2002
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Abstract
The invention includes a method and a system for generating integrated circuit (IC) simulation information regarding the effect of design and fabrication process decisions. One embodiment includes creating and using a data store of profile-based information comprising metrology signal, structure profile data, process control parameters, and IC simulation attributes. Another embodiment includes creation and use of a simulation data store generated using test gratings that model the geometries of the IC interconnects. The interconnect simulation data store may be used in-line for monitoring electrical and thermal properties of an IC device during fabrication. Other embodiments include methods and systems for generating and using simulation data stores utilizing a metrology simulator and various combinations of a fabrication process simulator, a device simulator, and/or circuit simulator. Information from the simulation data store may be used in-line in-situ during the design or fabrication process steps.
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