Methods of forming field effect transistors including raised source/drain regions
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United States of America Patent
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Oct 4, 2005
Grant Date -
Dec 30, 2004
app pub date -
Apr 26, 2004
filing date -
Jun 25, 2003
priority date (Note) -
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Abstract
A method of forming a field effect transistor may include forming a doped layer at a surface of a semiconductor substrate, and forming a groove through the doped layer at the surface of the semiconductor substrate while maintaining portions of the doped layer on opposite sides of the groove. A gate insulating layer may be formed on a surface of the groove, and a gate electrode may be formed on the gate insulating layer in the groove.
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