Method for manufacturing a semiconductor device having an interconnect structure over a substrate
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United States of America Patent
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May 23, 2023
Grant Date -
Sep 30, 2021
app pub date -
Sep 4, 2020
filing date -
Mar 26, 2020
priority date (Note) -
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status (Latency Note)
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Abstract
An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.
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