E-fuse structure of semiconductor device

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United States of America Patent

PATENT NO 9099469
APP PUB NO 20150102458A1
SERIAL NO

14503563

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Abstract

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Provided is an e-fuse structure of a semiconductor device. the e-fuse structure may include a fuse link formed of a first metal material to connect a cathode with an anode, a capping dielectric covering a top surface of the fuse link, and a dummy metal plug penetrating the capping dielectric and being in contact with a portion of the fuse link. The dummy metal plug may include a metal layer and a barrier metal layer interposed between the metal layer and the fuse link. The barrier metal layer may be formed of a second metal material different from the first metal material.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Hyun-Min Uiwang-si, KR 32 166
Maeda, Shigenobu Seongnam-si, KR 248 3632

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