Characterization of induced shift on an overlay target using post-etch artifact wafers
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United States of America Patent
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Oct 26, 2004
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N/A
app pub date -
Feb 29, 2000
filing date -
Feb 29, 2000
priority date (Note) -
Expired
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Abstract
The invention relates to an overlay that allows for the characterization of wafer-induced shift without the added risk of low wafer yield. The present invention also relates to a method of quanitifying both wafer-induced shift and tool-induced shift in the field of photolithgraphy. By chararacterizing wafer-induced shift in an artifact wafer, tool-induced shift may be determined by use of the characterized wafer.
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