Semiconductor substrate, method of fabricating the same, method of fabricating semiconductor device, and method of fabricating image sensor
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United States of America Patent
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Sep 3, 2013
Grant Date -
Aug 11, 2011
app pub date -
Apr 15, 2011
filing date -
Jun 11, 2007
priority date (Note) -
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Abstract
In an example embodiment, an image sensor includes a semiconductor layer and isolation regions disposed in the semiconductor layer. The isolation regions define active regions of the semiconductor layer. The image sensor further includes photoelectric converters disposed in the semiconductor layer and at least one wiring layer disposed over a top surface of the semiconductor layer. The image sensor also includes color filters disposed below a bottom surface of the semiconductor layer and lenses disposed below the color filters. Each lens is arranged to concentrate incoming light into an area spanned by a corresponding photoelectric converter.
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