Magnetoresistive element and manufacturing method thereof
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United States of America Patent
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Apr 5, 2011
Grant Date -
Oct 30, 2008
app pub date -
Apr 23, 2008
filing date -
Apr 24, 2007
priority date (Note) -
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Abstract
A magnetoresistive element includes a first stacked structure formed by sequentially stacking a first fixed layer in which a magnetization direction is fixed and a first nonmagnetic layer, a second stacked structure formed on the first stacked structure by sequentially stacking a free layer in which a magnetization direction is changeable, a second nonmagnetic layer, and a second fixed layer in which a magnetization direction is fixed, and a circumferential wall formed in contact with a circumferential surface of the second stacked structure to surround the second stacked structure, and made of an insulator. A circumferential surface of the first stacked structure is substantially perpendicular. The second stacked structure has a tapered shape which narrows upward.
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