High-voltage diodes formed in advanced power integrated circuit devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8823051
APP PUB NO 20070018250A1
SERIAL NO

11434545

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • FAIRCHILD SEMICONDUCTOR CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Jun Scarborough, US 180 1530
Harley-Stead, Micheal Portland, US 2 19
Holt, Jim G Los Altos, US 7 104

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Mar 2, 2026
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00