Method for manufacturing semiconductor structure
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United States of America Patent
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Sep 20, 2022
Grant Date -
Apr 2, 2020
app pub date -
May 6, 2019
filing date -
Sep 27, 2018
priority date (Note) -
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Abstract
Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.
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