Semiconductor devices with low resistance gate structures

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United States of America Patent

PATENT NO 11145716
SERIAL NO

16877510

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Abstract

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A structure comprises a substrate and a first gate structure and a second gate structure in a dielectric layer over the substrate. The first and second gate structures having a width, the width of the first gate structure is shorter than the width of the second gate structure. The first gate structure comprises a first gate conductor layer and the second gate structure comprises a second gate conductor layer. The first gate conductor layer is made of a different metal from the second gate conductor layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES U.S. INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Rinus Tek Po Ballston Lake, US 14 41
Shu, Jiehui Dalian, CN 101 177

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