Electronic devices comprising crystalline materials and related memory devices and systems

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United States of America Patent

PATENT NO 11735416
APP PUB NO 20210005451A1
SERIAL NO

17027331

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Abstract

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A method includes forming a first amorphous material, forming a second amorphous material over and in contact with the first material, removing a portion of the second material and the first material to form pillars, and exposing the materials to a temperature between a crystallization temperature of the first material and a crystallization temperature of the second material. The first material and the second material each comprise at least one element selected from the group consisting of silicon and germanium. The second material exhibits a crystallization temperature different than a crystallization temperature of the first material. Semiconductor structures, memory devices, and systems are also disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chavan, Ashonita A Boise, US 45 434
Chhajed, Sameer Boise, US 21 163
Mutch, Michael Meridian, US 16 20
Ramaswamy, Durai Vishak Nirmal Boise, US 237 1272

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