Low remanence flux concentrator for MRAM devices
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United States of America Patent
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Apr 20, 2004
Grant Date -
Nov 6, 2003
app pub date -
May 2, 2002
filing date -
May 2, 2002
priority date (Note) -
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Abstract
Systems, devices and methods are provided for magnetic memory elements with low remanence flux concentrators. Improved bit yield is attributable to reduced remanence in the flux concentrator. Remanence provides the memory element with a biasing magnetic field. The flux concentrator includes anisotropy aligned with an appropriate conductor. One aspect of the present subject matter is a memory cell. One memory cell embodiment includes a magnetic memory element and a flux concentrator operably positioned with respect to a conductor. The conductor is adapted to provide a current-induced magnetic flux to the magnetic memory element. The flux concentrator includes an easy axis of magnetization aligned with the conductor and a hard axis of magnetization orthogonal to the easy axis of magnetization. Other aspects are provided herein.
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