Method of manufacturing semiconductor device, surface treatment method, substrate processing apparatus, and recording medium

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11257669
APP PUB NO 20200194250A1
SERIAL NO

16712402

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Abstract

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There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.

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Patent Owner(s)

  • KOKUSAI ELECTRIC CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harada, Kazuhiro Toyama, JP 67 1787
Kitagawa, Naoko Toyama, JP 4 3
Kogura, Shintaro Toyama, JP 18 778
Minami, Masayoshi Toyama, JP 24 447
Nishida, Masaya Toyama, JP 13 29
Otani, Shogo Toyama, JP 7 0
Yoshino, Akihito Toyama, JP 8 422

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