Seed layer for ferroelectric memory device and manufacturing method thereof

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United States of America Patent

PATENT NO 11869766
APP PUB NO 20220223413A1
SERIAL NO

17709284

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Abstract

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A method includes: providing a bottom layer; forming a first transistor over a substrate; forming a bottom electrode over the transistor; depositing a first seed layer over the bottom electrode; performing a surface treatment on the first seed layer, wherein after the surface treatment the first seed layer includes at least one of a tetragonal crystal phase and an orthorhombic crystal phase; depositing a dielectric layer over the bottom layer adjacent to the first seed layer, the dielectric layer including an amorphous crystal phase; depositing an upper layer over the dielectric layer; performing a thermal operation on the dielectric layer to thereby convert the dielectric layer into a ferroelectric layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yu-Ming Hsinchu, TW 534 1806
Lu, Chun-Chieh Taipei, TW 92 169
Yeong, Sai-Hooi Hsinchu County, TW 432 893

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