Semiconductor device with programmable anti-fuse feature and method for fabricating the same

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United States of America Patent

PATENT NO 11189565
SERIAL NO

16794817

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Abstract

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The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a peak portion positioned on the substrate, a gate insulating layer positioned on the peak portion and the substrate, a gate bottom conductive layer positioned on the gate insulating layer, and a first doped region positioned in the substrate and adjacent to one end of the gate insulating layer.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Chin-Ling Taoyuan, TW 37 35

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