Image sensor and method for manufacturing the same
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United States of America Patent
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Jul 5, 2011
Grant Date -
Apr 23, 2009
app pub date -
Oct 16, 2008
filing date -
Oct 22, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
An image sensor and a method for manufacturing the same that includes photodiodes formed in a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, the first insulating layer including a seed pattern corresponding spatially to the positions of the photodiodes, lower microlenses composed of an organic material formed over the seed pattern, a second insulating layer formed over the lower microlenses, a third insulating layer formed over the second insulating layer, color filters formed over the third insulating layer, and upper micro lenses formed over the color filters.
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