Stress modulation for dielectric layers

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United States of America Patent

PATENT NO 11502196
APP PUB NO 20200350433A1
SERIAL NO

16933622

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Abstract

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A method includes etching a first portion and a second portion of a dummy gate stack to form a first opening and a second opening, respectively, and depositing a silicon nitride layer to fill the first opening and the second opening. The deposition of the silicon nitride layer comprises a first process selected from treating the silicon nitride layer using hydrogen radicals, implanting the silicon nitride layer, and combinations thereof. The method further includes etching a third portion of the dummy gate stack to form a trench, etching a semiconductor fin underlying the third portion to extend the trench down into a bulk portion of a semiconductor substrate underlying the dummy gate stack, and depositing a second silicon nitride layer into the trench.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Ching Yu Baoshan Township, TW 13 117
Ko, Chung-Ting Kaohsiung, TW 71 81
Lee, Tze-Liang Hsinchu, TW 355 3917
Lin, Han-Chi Kaohsiung, TW 5 7
Wang, Chunyao Zhubei, TW 37 43
Wang, Yung-Chih Hsinchu, TW 62 215

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