Synapse array of neuromorphic device including synapses having ferro-electric field effect transistors and operation method of the same
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United States of America Patent
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Sep 13, 2022
Grant Date -
Dec 6, 2018
app pub date -
Nov 13, 2017
filing date -
Jun 5, 2017
priority date (Note) -
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Abstract
A synapse array of a neuromorphic device is provided. The synapse array may include a pre-synaptic neuron; a row line extending from the pre-synaptic neuron in a row direction; a post synaptic neuron; a column line extending from the post-synaptic neuron in a column direction; and a synapse disposed at an intersection region between the row line and the column line. The synapse may include an n-type ferroelectric field effect transistor (n-FeFET) having a source electrode, a gate electrode and a body; a p-type ferroelectric field effect transistor (p-FeFET) having a source electrode, a gate electrode and a body; and a resistive element having a first node electrically connected to the source electrode of the n-FeFET and electrically connected to the source electrode of the p-FeFET, and the n-FeFET and the p-FeFET are electrically connected in series.
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