Semiconductor device
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United States of America Patent
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May 10, 2011
Grant Date -
Feb 21, 2008
app pub date -
Sep 6, 2007
filing date -
Dec 11, 2000
priority date (Note) -
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Abstract
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
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