Semiconductor device and method of fabricating the same
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United States of America Patent
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Aug 31, 2010
Grant Date -
Jan 1, 2009
app pub date -
Nov 21, 2007
filing date -
Jun 28, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device includes a transistor having a recessed gate, contact plugs formed in a region of a plurality of trenches, which are formed by recessing a semiconductor substrate. Further, a metal line and a source/drain region can be connected through the contact plug, so that on-current can be increased as much as an increased channel area.
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