High threshold NMOS source-drain formation with As, P and C to reduce damage

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Jun 15, 2010
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Jul 16, 2009
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Jan 10, 2008
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Jan 10, 2008

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arsenic in the NSD and a high threshold NMOS transistor formed with the inventive method are also disclosed.

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TEXAS INSTRUMENTS INCORPORATED

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Kohli, Puneet	Austin, US	21	391
Mehrotra, Manoj	Plano, US	73	724
Tang, Shaoping	Plano, US	21	336

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High threshold NMOS source-drain formation with As, P and C to reduce damage

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United States of America Patent

11972417

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PATENT NO	7736983
APP PUB NO	20090179280A1
SERIAL NO	11972417
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 15, 2010	US,7736983,B2 US7736983B2	GRANTED PATENT AS SECOND PUBLICATION
July 16, 2009	US,20090179280,A1 US20090179280A1	FIRST PUBLISHED PATENT APPLICATION

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11972417

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